Growth and characterization of textured well-faceted ZnO on planar Si(100), planar Si(111), and textured Si(100) substrates for solar cell applications

• Chin-Yi Tsai,
• Jyong-Di Lai,
• Shih-Wei Feng,
• Chien-Jung Huang,
• Chien-Hsun Chen,
• Fann-Wei Yang,
• Hsiang-Chen Wang and
• Li-Wei Tu

Beilstein J. Nanotechnol. 2017, 8, 1939–1945, doi:10.3762/bjnano.8.194

• sunlight from the metals, but they can also serve the function of antireflection coating (ARC) films, given proper design of the film thickness. A ZnO thin film with appropriate doping could potentially act as the emitter with a Si substrate base to form a heterostructure solar cell. Therefore, in the most

Surface passivation and optical characterization of Al₂O₃/a-SiC_x stacks on c-Si substrates

• Gema López,
• Pablo R. Ortega,
• Cristóbal Voz,
• Isidro Martín,
• Mónica Colina,
• Anna B. Morales,
• Albert Orpella and
• Ramón Alcubilla

Beilstein J. Nanotechnol. 2013, 4, 726–731, doi:10.3762/bjnano.4.82

• ) was evaluated at a carrier injection level corresponding to 1-sun illumination, which led to values below 10 cm/s. Reflectance values below 2% were measured on textured samples over the wavelength range of 450–1000 nm. Keywords: aluminum oxide (Al2O3); antireflection coating; atomic layer deposition

• single 90 nm thick Al2O3 film. Therefore, the latter represents the better option as an antireflection coating compared to Al2O3/a-SiCx stacks. This result is supported by the reflectance measurements of Al2O3 films with different thicknesses and Al2O3/a-SiCx stacks on polished and textured c-Si

• . Inserting an a-SiCx capping layer by PECVD technique can overcome this drawback. In this study, we have investigated different combinations of layers that provide good antireflection properties while maintaining a total film thickness of 75 nm. In addition to the passivation, a high-quality antireflection